TSTG Storage temperature -55 to +125 °C TBIAS Temperature under bias -40 to +85 °C TSOLDER Soldering...

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Functional operation should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Expo-sure to conditions beyond the operational limits for extended periods of time may affect device reliability.
Recommended DC Operating Conditions (TA = TOPR) Symbol
Parameter
Minimum
Typical
Maximum
Unit
Notes
4.75
5.0
5.5
V
THS = VSS
VCC
Supply voltage
4.50
5.0
5.5
V
THS = VCC
VSS
Supply voltage
0
0
0
V
VIL
Input low voltage
-0.3
-
0.8
V
VIH
Input high voltage
2.2
-
VCC + 0.3
V
VBC1,
V
Backup cell voltage
2.0
-
4.0
V
BC2
THS
Threshold select
-0.3
-
VCC + 0.3
V
Note:
Typical values indicate operation at TA = 25°C, VCC = 5V or VBC.
Oct. 1998 D
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bq2201
DC Electrical Characteristics (TA = TOPR, VCC = 5V ± 10%) Symbol
Parameter
Minimum
Typical
Maximum
Unit
Conditions/Notes
ILI
Input leakage current
-
-
± 1
µA
VIN = VSS to VCC
VOH
Output high voltage
2.4
-
-
V
IOH = -2.0mA
VOHB
VOH, BC supply
VBC - 0.3
-
-
V
VBC > VCC, IOH = -10µA
VOL
Output low voltage
-
-
0.4
V
IOL = 4.0mA
ICC
Operating supply current
-
3
5
mA
No load on VOUT and CECON.
4.55
4.62
4.75
V
THS = VSS
VPFD
Power-fail detect voltage
4.30
4.37
4.50
V
THS = VCC
VSO
Supply switch-over voltage
-
VBC
-
V
VOUT data-retention current
I
Data-retention mode
CCDR
-
-
100
nA
to additional memory not in-
current
cluded.
VCC - 0.2
-
-
V
VCC > VBC, IOUT = 100mA
VOUT1
VOUT voltage
VCC - 0.3
-
-
V
VCC > VBC, IOUT = 160mA
VOUT2
VOUT voltage
VBC - 0.3
-
-
V
VCC < VBC, IOUT = 100µA
-
VBC2
-
V
VBC1 < 2.5V
V
Active backup cell
BC
voltage
-
VBC1
-
V
VBC1 > 2.5V
IOUT1
VOUT current
-
-
160
mA
VOUT > VCC - 0.3V
IOUT2
VOUT current
-
100
-
µA
VOUT > VBC - 0.2V
Note:
Typical values indicate operation at TA = 25°C, VCC = 5V or VBC.
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bq2201
Capacitance (TA = 25°C, F = 1MHz, VCC = 5.0V) Symbol
Parameter
Minimum
Typical
Maximum
Unit
Conditions
CIN
Input capacitance
-
-
8
pF
Input voltage = 0V
COUT
Output capacitance
-
-
10
pF
Output voltage = 0V
Note:
This parameter is sampled and not 100% tested.
AC Test Conditions
Parameter
Test Conditions
Input pulse levels
0V to 3.0V
Input rise and fall times
5ns
Input and output timing reference levels
1.5V (unless otherwise specified)
Output load (including scope and jig)
See Figure 3
5V
960
CECON
510
100pF
FG220102.eps
Figure 3. Output Load
Oct. 1998 D
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bq2201
Power-Fail Control (TA = TOPR)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
Notes
tPF
VCC slew, 4.75V to 4.25V
300
-
-
µs
tFS
VCC slew, 4.25V to VSO
10
-
-
µs
tPU
VCC slew, 4.25V to 4.75V
0
-
-
µs
Chip-enable propagation
tCED
-
7
10
ns
delay
Time during which SRAM is
tCER
Chip-enable recovery
40
80
120
ms
write-protected after VCC
passes VPFD on power-up.
Delay after VCC slews down
tWPT
Write-protect time
40
100
150
µs
past VPFD before SRAM is
write-protected.
Note:
Typical values indicate operation at TA = 25°C.
Caution:
Negative undershoots below the absolute maximum rating of -0.3V in battery-backup mode may affect data integrity.
Power-Down Timing
tPF
4.75
VPFD
tFS
4.25
VCC
VSO
CE
tWPT
VOHB
CECON
TD220102.eps
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bq2201
Power-Up Timing
tPU
4.75
VCC
4.25
VPFD
VSO
tCER
CE
tCED
tCED
VOHB
CECON
TD220103.eps
Oct. 1998 D
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bq2201
8-Pin DIP Narrow (PN)
8-Pin DIP Narrow (PN)
Dimension
Minimum
Maximum
A
0.160
0.180
A1
0.015
0.040
B
0.015
0.022
B1
0.055
0.065
C
0.008
0.013
D
0.350
0.380
E
0.300
0.325
E1
0.230
0.280
e
0.300
0.370
G
0.090
0.110
L
0.115
0.150
S
0.020
0.040
All dimensions are in inches.
8-Pin SOIC Narrow (SN)
8-Pin SOIC Narrow (SN)
Dimension
Minimum
Maximum
A
0.060
0.070
A1
0.004
0.010
B
0.013
0.020
C
0.007
0.010
D
0.185
0.200
E
0.150
0.160
e
0.045
0.055
H
0.225
0.245
L
0.015
0.035
All dimensions are in inches.
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S: 16-Pin SOIC
16-Pin S (SOIC)
Dimension
Minimum
Maximum
A
0.095
0.105
D
B
e
A1
0.004
0.012
B
0.013
0.020
C
0.008
0.013
E
D
0.400
0.415
E
0.290
0.305
H
e
0.045
0.055
H
0.395
0.415
A
L
0.020
0.040
C
All dimensions are in inches.
.004
A1
L
Oct. 1998 D
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bq2201
Data Sheet Revision History
Change No.
Page No.
Description
Nature of Change
1
Added industrial temperature range
Was: THS tied to V
2
1, 3, 4
10% supply operation
OUT
Is: THS tied to VCC
3
1, 9, 11
Added 16-pin package option
Note:
Change 1 = Sept. 1991 B changes from Sept. 1990 A.
Change 2 = Aug. 1997 C changes from Sept. 1991 B.
Change 3 = Oct. 1998 D changes from Aug. 1997 C.
Oct. 1998 D
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bq2201
Ordering Information
bq2201
Temperature Range:
blank = Commercial (0 to +70°C)
N = Industrial (-40 to +85°C)
Package Option:
PN = 8-pin narrow plastic DIP
SN = 8-pin narrow SOIC
S = 16-pin SOIC
Device:
bq2201 Nonvolatile SRAM Controller
Oct. 1998 D
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bq2201
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